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US5U35
Transistor
10000
Pulsed
Ta = 125 ℃
0.1
Pulsed
1000
Ta = 75 ℃
100
Ta = 125 ℃
10
Ta = 25 ℃
0.01
Ta = 75 ℃
Ta = 25 ℃
1
0.1
0.01
Ta= - 25 ℃
0.001
Ta= - 25 ℃
0
5
10 15 20 25 30 35 40
0
0.1
0.2
0.3
0.4
0.5
0.6
REVERSE VOLTAGE : VR [V]
Fig.10 Reverse Current vs. Reverse Voltage
FORWARD VOLTAGE : VF(V)
Fig.11 Forward Current vs. Forward Voltage
Notice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V F characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/5
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